Strain compensation in boron-indium coimplanted laser thermal processed silicon
نویسندگان
چکیده
Strain in B-implanted laser thermal processed sLTPd silicon is reduced by coimplantation of In. Strain in the codoped layer is calculated using lattice constants measured by high-resolution x-ray diffraction. Compensation of the strain with increasing In dose corresponds to suppression of the carrier deactivation during post-LTP annealing. © 2005 American Institute of Physics. fDOI: 10.1063/1.1891282g
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